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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1700 description drain current C i d = 5a@ t c =25 drain source voltage- : v dss = 450v(min) applications high speed power switching. low drive current. suitable for motor control, switching regulator and dc C dc converter. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 450 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 5 a p tot total dissipation@tc=25 35 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1700 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 450 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 2.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 3a 1.8 i gss gate source leakage current v gs = 25v;v ds = 0 10 ua i dss zero gate voltage drain current v ds =450v; v gs = 0 250 ua pdf pdffactory pro www.fineprint.cn |
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